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DMNH6042SPS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMNH6042SPS
Description  60V 175째C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI
PDF  7 Pages
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMNH6042SPS Datasheet(HTML) 4 Page - Diodes Incorporated

  DMNH6042SPS Datasheet HTML 1Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 2Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 3Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 4Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 5Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 6Page - Diodes Incorporated DMNH6042SPS Datasheet HTML 7Page - Diodes Incorporated  
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PowerDI is a registered trademark of Diodes Incorporated.
DMNH6042SPS
Document number: DS38683 Rev. 1 - 2
4 of 7
www.diodes.com
July 2016
© Diodes Incorporated
DMNH6042SPS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-50
-25
0
25
50
75
100
125
150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
V
GS = 4.5V, ID = 4.4A
V
GS = 10V, ID = 5.1A
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50
-25
0
25
50
75
100
125 150
175
T
J, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 1mA
I
D = 250µA
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
V
SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
V
GS = 0V
T
A = -55
oC
T
A = 25
oC
T
A = 85
oC
T
A = 125
oC
T
A = 150
oC
T
A = 175
oC
10
100
1000
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0
2
4
6
8
10
0
2
4
6
8
10
Q
g (nC)
Figure 11. Gate Charge
V
DS = 44V, ID = 5.2A
0.01
0.1
1
10
100
0.1
1
10
100
V
DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
T
J(Max)=175℃
T
C=25℃
Single Pulse
DUT on infinite heatsink
V
GS=10V
R
DS(ON) Limited
P
W=1s
P
W=100ms
P
W=10ms
P
W=1ms
P
W=100µs
P
W=10µs



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