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Plastic-Encapsulate Mosfets

GUANGDONG

HOTTECH

INDUSTRIAL

CO., LTD.

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

-1

-1.6

-3

V

-

48

55

mΩ

Drain-Source On-State Resistance

-

73

105

mΩ

Forward Transconductance

4

7

-

S

Dynamic Characteristics (Note4)

Input Capacitance

-

1040

-

PF

Output Capacitance

-

420

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

150

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

-

15

-

nS

Turn-on Rise Time

-

13

-

nS

Turn-Off Delay Time

-

58

-

nS

Turn-Off Fall Time

21

-

nS

Total Gate Charge

-

12

-

nC

Gate-Source Charge

-

2.2

-

nC

Gate-Drain Charge

-

3

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-

-

-1.2

V

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

9435