CMPT3906 datasheet(1/2 Pages) CENTRAL

Part #	CMPT3906

Description	COMPLEMENTARY SILICON TRANSISTORS

PDF	2 Pages

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Manufacturer	CENTRAL [Central Semiconductor Corp]

Direct Link	http://www.centralsemi.com

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MAXIMUM RATINGS: (TA=25°C)

SYMBOL

CMPT3904

CMPT3906

UNITS

Collector-Base Voltage

VCBO

60

40

V

Collector-Emitter Voltage

VCEO

40

V

Emitter-Base Voltage

VEBO

6.0

5.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

CMPT3904

CMPT3906

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICEV

VCE=30V, VEB=3.0V

50

nA

IBL

VCE=30V, VEB=3.0V

50

nA

BVCBO

IC=10µA

60

40

V

BVCEO

IC=1.0mA

40

V

BVEBO

IE=10µA

6.0

5.0

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.20

0.25

V

VCE(SAT)

IC=50mA, IB=5.0mA

0.30

0.40

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.65

0.85

0.65

0.85

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.95

V

hFE

VCE=1.0V, IC=0.1mA

40

60

hFE

VCE=1.0V, IC=1.0mA

70

80

hFE

VCE=1.0V, IC=10mA

100

300

100

300

hFE

VCE=1.0V, IC=50mA

60

hFE

VCE=1.0V, IC=100mA

30

CMPT3904 NPN

CMPT3906 PNP

COMPLEMENTARY

SILICON TRANSISTORS

SOT-23 CASE

Central

Semiconductor Corp.

TM

R4 (26-September 2002)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT3904,

CMPT3906 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for small signal general

purpose amplifier and switching applications.

MARKING CODES:

CMPT3904: C1A

CMPT3906: C2A

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