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Rev.1.0

SSF3606

30V N-Channel MOSFET

Zero Gate Voltage Drain Current

1

μA

Gate-Body Leakage Current

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

1.3

1.7

2.5

V

6.4

8.5

mΩ

Drain-Source On-State Resistance

4.8

6

mΩ

Forward Transconductance

25

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

3100

PF

Output Capacitance

550

PF

Reverse Transfer Capacitance

F=1.0MHz

300

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

19

nS

Turn-on Rise Time

11

nS

Turn-Off Delay Time

60

nS

Turn-Off Fall Time

25

nS

Total Gate Charge

50

nC

Gate-Source Charge

8

nC

Gate-Drain Charge

15

nC

Body Diode Reverse Recovery Time

20

nS

Body Diode Reverse Recovery Charge

5

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

0.75

1.2

V

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on 1in

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.