A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. A

7525 ETHEL AVENUE

• NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

1/1

Specifications are subject to change without notice.

NONE

SYMBOL

TEST CONDITIONS

MINIMUM

TYPICAL

MAXIMUM

UNITS

65

V

1.0

mA

1.0

µµµµA

1.0

6.0

V

80

mmhos

f = 1.0 MHz

7.0

9.7

2.3

pF

NF

f = 400 MHz

3.0

dB

ηηηη

11.0

45

13.5

50

dB

%

ψ

ψ

ψ

ψ

NO DEGRADRADATION IN OUTPUT POWER

SILICON N-CHANNEL RF POWER MOSFET

MRF161

DESCRIPTION:

The

Mode N-Channel MOS Broadband RF

Power Transistor for Wideband Large

Signal Amplifier and Oscillator

Applications from 2.0 to 400 MHz.

MAXIMUM RATINGS

900 mA

65 V

±40 V

-65

-65

θθθθ

JC

10

PACKAGE STYLE .500 4L FLG

MINIMUM

inches / mm

.220 / 5.59

.720 / 18.28

.125 / 3.18

.245 / 6.22

.970 / 24.64

B

C

D

E

F

G

A

MAXIMUM

.255 / 6.48

.980 / 24.89

.7.30 / 18.54

inches / mm

.230 / 5.84

H

.003 / 0.08

.007 / 0.18

DIM

K

L

I

J

.090 / 2.29

.150 / 3.81

.980 / 24.89

.110 / 2.79

.175 / 4.45

1.050 / 26.67

H

I

K

J

.112x45°

FULL R

C

E

B

G

D

F

A

L

Ø.125 NOM.

.125 / 3.18

.495 / 12.57

.505 / 12.83

.280 / 7.11

D

G

S

S