STD888 datasheet(2/2 Pages) ISC

2 / 2 page

INCHANGE Semiconductor

isc website：www.iscsemi.com

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isc Silicon PNP Power Transistor

STD888

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNI

V(BR)EBO

Emitter-Base Breakdown Voltage

IE=-0.1mA,IC=0

-6

V (BR)CEO) *

Collector-Emitter Breakdown Voltage

IC=-10mA, IB=0

-30

V(BR)CBO

Collector-Base Breakdown Voltage

IC=-0.1mA ,IE=0

-60

VCE(sat) *

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -5mA

-0.15

IC= -2A; IB= -50mA

-0.25

IC= -5A; IB= -0.25A

-0.7

IC= -6A; IB= -0.25A

-0.7

IC= -8A; IB= -0.4A

-1.0

IC= -10A; IB= -0.5A

-1.5

VBE(sat)*

Base-Emitter Saturation Voltage

IC= -2A; IB= -50mA

-1.1

IC= -6A; IB= -0.25A

-1.4

ICBO

Collector Cutoff Current

VCB= -30V; IE= 0

-10

IEBO

Emitter Cutoff Current

VEB= -6V; IC=0

-10

hFE*

DC Current Gain

IC= -10mA; VCE= -1V

150

IC= -0.5A; VCE= -1V

150

300

IC= -5A; VCE= -1V

* Pulse Test: PW≤300μs, Duty Cycle≤1.5%

Switching Times; Resistive Load

Delay Time

IC= -3A; VCC= 20V;

IB1= IB2= -60mA

220

Rise Time

210

Storage Time

300

Fall Time

100

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