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ST72561 Datasheet(PDF) 236 Page - STMicroelectronics |
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ST72561 Datasheet(HTML) 236 Page - STMicroelectronics |
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236 / 262 page ![]() ST72561 236/262 12.9 I/O PORT PIN CHARACTERISTICS 12.9.1 General Characteristics Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. Notes: 1. Data based on characterization results, not tested in production. 2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested. 3. When the current limitation is not possible, the VIN absolute maximum rating must be respected, otherwise refer to IINJ(PIN) specification. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to Section 12.2 on page 222 for more details. 4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or an external pull-up or pull-down resistor (see Figure 129). Data based on design simulation and/or technology characteristics, not tested in production. 5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de- scribed in Figure 130). 6. Data based on characterization results, not tested in production. 7. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external interrupt source. Symbol Parameter Conditions Min Typ Max Unit VIL Input low level voltage 1) CMOS ports 0.3xVDD V VIH Input high level voltage 1) 0.7xVDD Vhys Schmitt trigger voltage hysteresis 2) 1 VIL Input low level voltage 1) TTL ports 0.8 VIH Input high level voltage 1) 2 Vhys Schmitt trigger voltage hysteresis 2) 400 mV IINJ(PIN) Injected Current on PB3 VDD=5V +4 mA Injected Current on any other I/O pin ± 4 ΣI INJ(PIN) 3) Total injected current (sum of all I/O and control pins) 7) ± 25 Ilkg Input leakage current on robust pins See “10-BIT ADC CHARACTERISTICS” on page 246 Input leakage current VSS≤VIN≤VDD ±1 µA IS Static current consumption 4) Floating input mode 200 RPU Weak pull-up equivalent resistor 5) VIN=VSS VDD=5V 50 90 250 k Ω CIO I/O pin capacitance 5 pF tf(IO)out Output high to low level fall time 6) CL=50pF Between 10% and 90% 25 ns tr(IO)out Output low to high level rise time 6) 25 tw(IT)in External interrupt pulse time 7) 1tCPU |
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