DMC3016LSD datasheet(2/10 Pages) DIODES

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DMC3016LSD

Document Number: DS36935 Rev. 4 - 2

2 of 10

www.diodes.com

December 2015

DMC3016LSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value Q1

Value Q2

Units

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±20

Continuous Drain Current (Note 6) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

8.2

6.5

-6.2

-5.0

t<10s

TA = +25°C

TA = +70°C

10.5

8.4

-8.0

-6.4

Maximum Body Diode Forward Current (Note 6)

2.5

-2.5

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-40

Avalanche Current (Note 7) L = 0.1mH

IAS

-22

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

1.2

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

102

°C/W

t<10s

Total Power Dissipation (Note 6)

TA = +25°C

1.6

TA = +70°C

1.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

RθJC

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (N-Channel Q1) (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

μA

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

—

3.0

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

VGS = 10V, ID = 12A

—

VGS = 4.5V, ID = 10A

Diode Forward Voltage

VSD

—

0.7

1.0

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

CISS

—

1,415

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

COSS

—

119

—

Reverse Transfer Capacitance

CRSS

—

Gate Resistance

—

2.6

3.2

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

11.3

—

VDS = 15V, ID = 12A

Total Gate Charge (VGS = 10V)

—

25.1

—

Gate-Source Charge

QGS

—

3.5

—

Gate-Drain Charge

QGD

—

3.6

—

Turn-On Delay Time

tD(ON)

—

4.8

—

VDD = 15V, VGS = 10V,

RL = 1.25Ω, RG = 3Ω,

Turn-On Rise Time

—

16.5

—

Turn-Off Delay Time

tD(OFF)

—

26.1

—

Turn-Off Fall Time

—

5.6

—

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. UIS in production with L = 0.1mH, starting TA = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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