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TPV593 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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TPV593 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page ![]() A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC NONE SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 40 mA 26 V BVCBO IC = 10 mA 45 V BVEBO IE = 10 mA 4.0 V hFE VCE = 5.0 V IC = 250 mA 10 --- Cob VCB = 28 V f = 1.0 MHz 8.0 pF PG Po = 2.0 W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25 V IC = 410 mA f = 860 MHz 10 12 dB IMD3 Po = 2.0 W SOUND CARRIER = -10 dB VISION CARRIER = -8.0 dB CHROMA = 16 dB VCE = 25 V IC = 410 mA f = 860 MHz -60 dBc NPN SILICON RF POWER TRANSISTOR TPV593 DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting • High Gain MAXIMUM RATINGS IC 1.2 A VCB 45 V PDISS 17.5 W @ TC = 25 OC TJ -55 OC to +200 OC TSTG -55 OC to +200 OC θθ JC 10 OC/W PACKAGE STYLE .280 4L STUD 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER |
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