2

Absolute

Symbol

Parameter

Units

Maximum

V

DS

V

5.5

V

GS

V-5

V

GD

V-5

I

DS

mA

[3]

mW

400

RF Input Power

dBm

20

T

CH

°C

160

T

STG

Storage Temperature

°C

-65 to 160

θ

jc

°C/W

200

Notes:

1. Operation of this device above any one of

these parameters may cause permanent

damage.

2. Assumes DC quiescent conditions.

3. V

4. Source lead temperature is 25

°C. Derate

5 mW/

°C for T

5. Please refer to failure rates in reliability data

sheet to assess the reliability impact of

running devices above a channel temperature

of 140

°C.

6. Thermal resistance measured using 150

°C

Liquid Crystal Measurement method.

02

4

6

8

500

400

300

200

100

0

-0.6 V

0 V

+0.6 V

NF (dBm)

Figure 2. NF @ 2 GHz, 4 V, 60 mA.

LSL = 28.5, Nominal = 0.6, USL = 0.8.

0.2

0.4

0.5

0.6

0.7

0.3

0.8

0.9

100

80

60

40

20

0

-3 Std

+3 Std

Cpk = 1.05

Stdev = 0.07

OIP3 (dBm)

Figure 3. OIP3 @ 2 GHz, 4 V, 60 mA.

LSL = 28.5, Nominal = 31.0, USL = 36.0

28

32

30

34

36

-3 Std

+3 Std

150

120

90

60

30

0

Cpk = 1.00

Stdev = 1.07

GAIN (dB)

Figure 4. Gain @ 2 GHz, 4 V, 60 mA.

LSL = 13.5, Nominal = 15.0, USL = 16.5

13

15

14

16

17

-3 Std

+3 Std

120

100

80

60

40

20

0

Cpk = 4.37

Stdev = 1.11

Notes:

8. Distribution data sample size is 349 samples from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere within

the upper and lower spec limits.

9. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on

production test requirements. Circuit losses have been de-embedded from actual measurements.

Note:

7. Under large signal conditions, V

positive and the drain current may exceed

I

not exceeded.