SS8050-TO92 datasheet(2/2 Pages) ISC

Part #	SS8050-TO92

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

isc Silicon NPN Power Transistor

SS8050

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CBO

Collector-base breakdown voltage

IC=100μA, IE=0

V(BR)CEO

Collector-emitter breakdown voltage

IC=0.1mA , IB=0

V(BR)EBO

Emitter-base breakdown voltage

IE= 100μA, IC=0

VCE(sat)

Collector-Emitter Saturation Voltage

IC=800mA; IB= 80mA

0.5

VBE(sat)

base-emitter saturation voltage

IC= 800mA; IB=80mA

1.2

VBE(on)

base-emitter voltage

IC= 10mA;VCE= 1V

1.0

ICBO

collector cut-off current

VCB =40 V,IE = 0

0.1

CEO

collector cut-off current

VCE= 20V, IB=0

0.1

IEBO

Emitter Cutoff Current

VEB=5V; IC=0

0.1

hFE-1

DC Current Gain

IC= 0.1A ; VCE= 1V

400

hFE-2

DC Current Gain

IC=0.8A ; VCE= 1V

Classification of hFE1

Rank

Range

85-160

120-200

160-300

300-400

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