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CJMPD08 Datasheet(PDF) 1 Page - ZP Semiconductor |
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CJMPD08 Datasheet(HTML) 1 Page - ZP Semiconductor |
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1 / 3 page ![]() DFNWB2*2-6L-A Plastic-Encapsulate MOSFETS CJMPD08 P-Channel Power MOSFET General Description The CJMPD08 uses advanced trench technology and design to Provide excellent RDS(on) with low gate charge. This device is suitable for use in DC-DC conversion applications. FEATURE Low Profile for Easy Fit in Thin Environments Bidirectional Current Folw with Common Source Configuration APPLICATIONS Optimized for Battery and Load Management Applications in Portable Equipment Li-Ion Battery Charging and Protection Circuits High Power Management in Portable , Battery Powered Products High Side Load Switch MARKING: Tape Drawing (Unit : mm) Maximum ratings (Ta=25 ℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 V Continuous Drain Current(Note1a) ID -3.6 A Power Dissipation (Note1a) PD 1.4 W Power Dissipation (Note1b) PD 0.7 W Thermal Resistance from Junction to Ambient (Note1a) RθJA 86 ℃/W DFNWB2*2-6L-A front back 1 of 3 sales@zpsemi.com www.zpsemi.com CJMPD08 |
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