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2N6449 Datasheet(PDF) 1 Page - InterFET Corporation

Part # 2N6449
Description  N-Channel Silicon Junction Field-Effect Transistor
PDF  1 Pages
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Manufacturer  INTERFET [InterFET Corporation]
Direct Link  http://www.interfet.com
Logo INTERFET - InterFET Corporation

2N6449 Datasheet(HTML) 1 Page - InterFET Corporation

  2N6449 Datasheet HTML 1Page - InterFET Corporation  
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B-24
01/99
2N6449, 2N6450
N-Channel Silicon Junction Field-Effect Transistor
¥ High Voltage
Absolute maximum ratings at TA = 25¡C
2N6449
2N6450
Reverse Gate Source Voltage
– 300 V
– 200 V
Reverse Gate Drain Voltage
– 300 V
– 200 V
Continuous Forward Gate Current
10 mA
10 mA
Continuous Device Power Dissipation
800 mW
800 mW
Power Derating
6.4 mW/°C 6.4 mW/°C
TOÐ39 Package
Dimensions in Inches (mm)
Pin Configuration
1 Source, 2 Drain, 3 Gate & Case
At 25°C free air temperature:
2N6449
2N6450
Process NJ42
Static Electrical Characteristics
Min
Max
Min
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
V(BR)GSS
– 300
– 200
V
IG = – 10 µA, VDS = ØV
– 100
nA
VGS = – 150V, VDS = ØV
Gate Reverse Current
IGSS
– 100
nA
VGS = – 100V, VDS = ØV
– 100
µA
VGS = – 150V, VDS = ØV
TA = 150°C
– 100
µA
VGS = – 100V, VDS = ØV
TA = 150°C
Gate Source Cutoff Voltage
VGS(OFF)
– 2
– 15
– 2
– 15
V
VDS = 30V, ID = 4 nA
Drain Saturation Current (Pulsed)
IDSS
210210
mA
VDS = 30V, VGS = ØV
Dynamic Electrical Characteristics
Common Source Forward
Yfs
0.5
3
0.5
3
mS
VDS = 30V, VGS = ØV
f = 1 kHz
Transfer Admittance
Common Source Output Conductance
Yos
100
100
µS
VDS = 30V, VGS = ØV
f = 1 kHz
Common Source Input Capacitance
Ciss
20
20
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Common Source
Crss
2.5
2.5
pF
VDS = 30V, VGS = ØV
f = 1 MHz
Reverse Transfer Capacitance
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287 FAX (972) 276-3375
www.interfet.com
Databook.fxp
1/13/99 2:09 PM
Page B-24


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