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BUT100 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT100 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor BUT100 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 125 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) ) Collector-Emitter Saturation Voltage IC= 50A; IB= 2.5A IC = 50A IB = 2.5A Tj = 100℃ 0.9 1.2 V VBE(sat) ∗ Base-EmitterSaturationVoltage IC= 50A; IB= 2.5A IC = 50A IB = 2.5A Tj = 100℃ 1.4 1.4 V hFE DC Current Gain IC= 1A ; VCE= 5V 50 ICBO Collector Cutoff Current VCB= 200V; IE= 0 10 μ A ICEO Collector Cut-off Current VCE=125V; IE= 0 VCE = 125V; TC= 100℃ 1 5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μ A ∗Pulsed:Pulseduration=3µs,dutycycle=2% |
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