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ASM3P2853 Datasheet(PDF) 3 Page - ON Semiconductor

Part # ASM3P2853
Description  Peak EMI Reducing Solution
PDF  7 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

ASM3P2853 Datasheet(HTML) 3 Page - ON Semiconductor

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ASM3P2853A
Rev. 2 | Page 3 of 7 | www.onsemi.com
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
VDD, VIN
Voltage on any pin with respect to Ground
-0.5 to +4.6
V
TSTG
Storage temperature
-65 to +125
°C
Ts
Max. Soldering Temperature (10 sec)
260
°C
TJ
Junction Temperature
150
°C
TDV
Static Discharge Voltage (As per JEDEC STD22- A114-B)
2
KV
Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect
device reliability.
Operating Conditions
Parameter
Symbol
Condition / Description
Min
Typ
Max
Unit
Supply Voltage
VDD
2.5V ± 5%
2.375
2.5
2.625
V
Ambient Operating
Temperature Range
TA
-40
-
+85
°C
Crystal Resonator Frequency
FXIN
25
MHz
Output Driver Load Capacitance
CL
-
-
15
pF
Crystal Specifications
Fundamental AT cut parallel resonant crystal
Nominal frequency
25MHz
Frequency tolerance
±50ppm or better at 25°C
Operating temperature range
-25°C to +85°C
Storage temperature
-40°C to +85°C
Load capacitance
18pF
Shunt capacitance
7pF maximum
ESR
25
Note: CY is Load Capacitance and Rx is used to prevent oscillations at overtone frequency of the Fundamental frequency.
Typical Crystal Interface Circuit
CY = 2*(CP – CS),
Where CP = Load capacitance of crystal from crystal vendor datasheet
CS = Stray capacitance due to CIN, PCB, Trace etc.
CY
Rx
CY
Crystal
R
XIN
XOUT



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