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2SC1881K Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC1881K Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Darlington Power Transistor 2SC1881K DESCRIPTION · High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) · Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A APPLICATIONS · Designed for High gain amplifier power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 6 A PC Collector Power Dissipation TC=25℃ 30 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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