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2SC6145A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC6145A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SC6145A DESCRIPTION · High frequency multi emitter transistor · Small package(TO-3P) · High power handling capacity ,160W · Complement to Type 2SA2223A · Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS · Signal transistors for audio amplifiers · Audio market ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 260 V VCEO Collector-Emitter Voltage 260 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous 4.0 A PC Collector Power Dissipation @ TC=25℃ 160 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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