MCP1623-ISLASHMC datasheet(3/30 Pages) MICROCHIP

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 2010-2016 Microchip Technology Inc.

DS40001420D-page 3

MCP1623/24

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

EN, FB, VIN, VSW, VOUT – GND ...............................................................................................................................+6.5V

EN, FB ...........................................................................................................<maximum of VOUT or VIN > (GND – 0.3V)

Output Short-Circuit Current ........................................................................................................................... Continuous

Power Dissipation ................................................................................................................................. Internally Limited

Storage Temperature .............................................................................................................................. -65°C to +150°C

Ambient Temperature with Power Applied ................................................................................................ -40°C to +85°C

Operating Junction Temperature............................................................................................................. -40°C to +125°C

ESD Protection on All Pins:

HBM............................................................................................................................................................. 3 kV

MM..............................................................................................................................................................300V

† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended

periods may affect device reliability.

DC CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VIN = 1.2V, COUT = CIN = 10 µF, L = 4.7 µH, VOUT =3.3V,

IOUT =15 mA, TA = +25°C.

Boldface specifications apply over the TA range of -40°C to +85°C.

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Input Characteristics

Minimum Start-Up Voltage

VIN

—0.65

0.8

Note 1

Minimum Input Voltage after

Start-Up

VIN

—0.35

—

Note 1

Output Voltage Adjust Range

VOUT

2.0

—

5.5

VVOUT VIN (Note 2)

Maximum Output Current

IOUT

——

1.5V VIN, 3.3V VOUT

Feedback Voltage

VFB

1.120

1.21

1.299

Feedback Input Bias Current

IVFB

—10

—

Quiescent Current – PFM mode

IQPFM

—

µA

Measured at VOUT = 4.0V;

EN = VIN, IOUT = 0 mA

(Note 3)

Quiescent Current – PWM mode

IQPWM

—

220

—

µA

Measured at VOUT; EN =

VIN IOUT = 0 mA (Note 3)

Quiescent Current – Shutdown

IQSHDN

—0.7

2.3

µA

VOUT = EN = GND;

Includes N-Channel and

P-Channel switch leakage

NMOS Switch Leakage

INLK

—0.3

—

µA

VIN =VSW =5V; VOUT =

5.5V VEN =VFB =GND

PMOS Switch Leakage

IPLK

—0.05

—

µA

VIN =VSW = GND;

VOUT =5.5V

NMOS Switch ON Resistance

RDS(ON)N

—0.6

—



VIN = 3.3V, ISW = 100 mA

Note 1:

3.3 k

 resistive load, 3.3V

OUT (1 mA).

For VIN > VOUT, VOUT will not remain in regulation.

IQ is measured from VOUT; VIN quiescent current will vary with boost ratio. VIN quiescent current can be

estimated by: (IQPFM * (VOUT/VIN)), (IQPWM * (VOUT/VIN)).

Peak current limit determined by characterization, not production tested

220

 resistive load, 3.3V

OUT (15 mA).

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