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LM4889 Datasheet(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LM4889
Description  1 Watt Audio Power Amplifier
PDF  19 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM4889 Datasheet(HTML) 4 Page - National Semiconductor (TI)

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Electrical Characteristics V
DD = 2.6V
(Notes 1, 2)
The following specifications apply for V
DD = 2.6V, AV = 2, and 8
Ω load unless otherwise specified. Limits apply for T
A = 25˚C.
Symbol
Parameter
Conditions
LM4889
Units
(Limits)
Typical
Limit
(Note 6)
(Notes 7, 9)
I
DD
Quiescent Power Supply Current
V
IN = 0V, Io = 0A, no Load
2.6
6
mA (max)
V
IN = 0V, Io = 0A, with BTL Load
3.0
6
mA (max)
I
SD
Shutdown Current
V
shutdown = GND (Note 8)
0.01
1
µA (max)
P
0
Output Power ( 8
Ω )
Output Power ( 4
Ω )
THD = 1% (max);f=1kHz
THD = 1% (max);f=1kHz
0.2
0.22
W
W
THD+N
Total Harmonic Distortion+Noise
P
o = 0.1Wrms; f = 1kHz
0.08
%
PSRR
Power Supply Rejection Ratio
V
ripple = 200mV sine p-p
f
ripple = 217Hz
f
ripple = 1kHz
44
44
dB
dB
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which
guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit
is given, however, the typical value is a good indication of device performance.
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJA, and the ambient temperature TA. The maximum
allowable power dissipation is PDMAX =(TJMAX–TA)/θJA or the number given in Absolute Maximum Ratings, whichever is lower. For the LM4889, see power derating
currents for additional information.
Note 4: Human body model, 100 pF discharged through a 1.5 k
Ω resistor.
Note 5: Machine Model, 220 pF–240 pF discharged through all pins.
Note 6: Typicals are measured at 25˚C and represent the parametric norm.
Note 7: Limits are guaranteed to National’s AOQL (Average Outgoing Quality Level).
Note 8: For micro SMD only, shutdown current is measured in a Normal Room Environment. Exposure to direct sunlight will increase ISD by a maximum of 2µA.
Note 9: Datasheet min/max specification limits are guaranteed by design, test or statistical analysis.
Note 10: All bumps have the same thermal resistance and contribute equally when used to lower thermal resistance. The LM4889ITL demo board (views featured
in the Application Information section) has two inner layers, one for VDD and one for GND. The planes each measure 600mils x 600mils (15.24mm x 15.24mm)
and aid in spreading heat due to power dissipation within the IC.
External Components Description
(Figure 1)
Components
Functional Description
1.
R
i
Inverting input resistance which sets the closed-loop gain in conjunction with R
f. This resistor also forms a
high pass filter with C
i at fC= 1/(2
π R
iCi).
2.
C
i
Input coupling capacitor which blocks the DC voltage at the amplifiers input terminals. Also creates a
highpass filter with R
i at fc = 1/(2
π R
iCi). Refer to the section, Proper Selection of External Components,
for an explanation of how to determine the value of C
i.
3.
R
f
Feedback resistance which sets the closed-loop gain in conjunction with R
i.AVD =2*(Rf/Ri).
4.
C
S
Supply bypass capacitor which provides power supply filtering. Refer to the Power Supply Bypassing
section for information concerning proper placement and selection of the supply bypass capacitor.
5.
C
B
Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of External
Components, for information concerning proper placement and selection of C
B.
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