CJW1012 datasheet(2/3 Pages) ZPSEMI

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Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

On/Off States

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID =250µA

Gate-Threshold Voltage

VGS(th)

VDS =VGS, ID =250µA

0.45

1.2

Gate-Body Leakage Current

IGSS

VDS =0V, VGS =±4.5V

±1

µA

Zero Gate Voltage Drain Current

IDSS

VDS =16V, VGS =0V

100

VGS =4.5V, ID =600mA

700

Drain-Source On-State Resistance

RDS(on)

VGS =2.5V, ID =500mA

850

mΩ

Forward Transconductance

VDS =10V, ID =400mA

Dynamic Characteristics

Input Capacitance (note 4)

Ciss

100

Output Capacitance (note 4)

Coss

Reverse Transfer Capacitance (note 4)

Crss

VDS =16V,VGS =0V,f =1MHz

Total Gate Charge

750

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS =10V,VGS =4.5V,

ID =250mA

225

Switching Times (note 4)

Turn-On Delay Time

td(on)

Rise Time

Turn-Off Delay Time

td(off)

Fall Time

VDD=10V,

RL=47Ω, ID=200mA,

VGS=4.5V,RG=10Ω

Drain-Source Diode Characteristics

Drain-Source Diode Forward Voltage (note 5)

VSD

IS=0.15A, VGS = 0V

1.2

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. This test is performed with no heat sink at Ta=25

℃.

3. This test is performed with infinite heat sink at Tc=25

℃.

4.These parameters have no way to verify.

5. Pulse Test : Pulse Width≤300µs, Duty Cycle≤0.5%.

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