MIC2125YML datasheet(5/34 Pages) MICROCHIP

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 2015 Microchip Technology Inc.

DS20005459B-page 5

MIC2125/6

Overvoltage Protection

Threshold

——

0.62

—

FET Drivers

DH, DL Output Low Voltage

—

0.1

VISINK = 10 mA

DH, DL Output High Voltage

VPVDD-0.1

VBST-0.1

——

ISOURCE = 10 mA

DH On-Resistance, High State

—

2.5

—

Ω

—

DH On-Resistance, Low State

—

1.6

—

DL On-Resistance, High State

—

1.9

—

DL On-Resistance, Low State

—

0.55

—

SW, BST Leakage Current

—

µA

—

Power Good (PG)

PG Threshold Voltage

%VOUT Sweep VFB from low to high

PG Hysteresis

—

Sweep VFB from high to low

PG Delay Time

—

µs

Sweep VFB from low to high

PG Low Voltage

—

200

VFB < 90% x VNOM, IPG = 1 mA

Thermal Protection

Overtemperature Shutdown

—

150

—

°C

TJ Rising

Overtemperature Shutdown

Hysteresis

—15

—

°C

—

TABLE 1-1:

ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Characteristics:

VIN = 12V, VOUT = 1.2V, VBST – VSW = 5V; TA = 25°C, unless noted. Bold values indicate

–40°C ≤ TJ ≤ +125°C. (Note 1).

Parameters

Min.

Typ.

Max.

Units

Conditions

Note 1:

Specification for packaged product only.

The application is fully functional at low VDD (supply of the control section) if the external MOSFETs have

low voltage VTH.

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