TP0610T datasheet(2/4 Pages) VISHAY

2 / 4 page

TP0610L/T, VP0610L/T, BS250

Vishay Siliconix

www.vishay.com

Document Number: 70209

S-41260—Rev. H, 05-Jul-04

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

TP0610L/T

VP0610L/T

BS250

Parameter

Symbol

Test Conditions

Typa

Min

Max

Min

Max

Min

Max

Unit

Static

Drain-Source

V(BR)DSS

VGS = 0 V, ID = −10 mA

−70

−60

Drain Source

Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −100 mA

−45

Gate-Threshold

Voltage

VGS(th)

VDS = VGS, ID = −1 mA

−1.9

−1

−2.4

−1

−3.5

−1

−3.5

VDS = 0 V, VGS = "20 V

"10

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V, TJ = 125_C

"50

GSS

VDS = 0 V, VGS = "15 V

"20

VDS = −48 V, VGS = 0 V

−1

Zero Gate Voltage

Drain Current

IDSS

VDS = −48 V, VGS = 0 V, TJ = 125_C

−200

Drain Current

DSS

VDS = −25 V, VGS = 0 V

−0.5

VDS = −10 V, VGS = −4.5 V

−180

−50

On-State Drain

Currentb

ID(on)

VDS = 10 V VGS = 10 V

L Suffix

−750

−600

Currentb

D(on)

VDS = −10 V, VGS = −10 V

T Suffix

−220

VGS = −4.5 V, ID = −25 mA

Drain-Source

rDS( )

VGS = −10 V, ID = −0.5 A

L Suffix

Drain-Source

On-Resistanceb

rDS(on)

VGS = −10 V, ID = −0.5 A, TJ = 125_C

L Suffix

VGS = −10 V, ID = −0.2 A

T Suffix

6.5

Forward

VDS = −10 V, ID = −0.5 A

L Suffix

Forward

Transconductanceb

gfs

VDS = −10 V, ID = −0.1 A

T Suffix

Diode Forward

Voltage

VSD

IS = −0.5 A, VGS = 0 V

−1.1

Dynamic

Input Capacitance

Ciss

Output Capacitance

Coss

VDS = −25 V, VGS = 0 V

f = 1 MHz

Reverse Transfer

Capacitance

Crss

f = 1 MHz

Switchingc

Turn-On Time

tON

VDD = −25 V, RL = 133 W

Turn-Off Time

tOFF

VDD = 25 V, RL = 133 W

ID ^ −0.18 A, VGEN = −10 V, Rg = 25 W

Notes

For DESIGN AID ONLY, not subject to production testing.

VPDS06

Pulse test: PW v300 ms duty cycle v2%.

Switching time is essentially independent of operating temperature.

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