NE894M13

NPN SILICON TRANSISTOR

•

NEW MINIATURE M13 PACKAGE:

– Small transistor outline

– 1.0 X 0.5 X 0.5 mm

– Low profile / 0.50 mm package height

– Flat lead style for better RF performance

•

IDEAL FOR > 3 GHz OSCILLATORS

•

LOW NOISE, HIGH GAIN

•

•

UHSO 25 GHz PROCESS

FEATURES

PACKAGE OUTLINE M13

PART NUMBER

NE894M13

2SC5787

PACKAGE OUTLINE

M13

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

GHz

17

20

–

dB

11

13

–

dB

–

1.4

2.5

pF

–

0.22

0.30

nA

–

–

100

nA

–

–

100

50

–

100

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

3. Collector to base capacitance when the emitter is grounded

DESCRIPTION

The NE894M13 transistor is designed for oscillator applica-

tions above 3 GHz. The NE894M13 features low voltage, low

current operation, low noise, and high gain. NEC's new low

profile/flat lead style "M13" package is ideal for today's portable

wireless applications.

California Eastern Laboratories

1. Emitter

2. Base

3. Collector

PIN CONNECTIONS

0.1

0.1

0.5

+0.1

ñ0.05

0.7±0.05

1

2

3

0.3

0.2

0.2

(Bottom View)