Supertex inc.

Supertex inc.

www.supertex.com

Doc.# DSFP-TC8220

B080713

TC8220

Features

Applications

Two Pair, N- and P-Channel

Enhancement-Mode MOSFET

General Description

The Supertex TC8220 consists of two pairs of high voltage, low

threshold N-channel and P-channel MOSFETs in a 12-Lead DFN

package.AllMOSFETshaveintegratedthe gate-to-sourceresistors

and gate-to-source Zener diode clamps which are desired for high

voltage pulser applications. The complimentary, high-speed, high

voltage, gate-clamped N and P-channel MOSFET pairs utilize an

advanced vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefficient inherent in MOS devices.

Characteristic of all MOS structures, these devices are free from

thermal runaway and thermally induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where very low threshold

voltage, high breakdown voltage, high input impedance, low input

and output capacitance, and fast switching speeds are desired.

Typical Application Circuit

1.8 to 5.0V

Logic Imputs

OUTB

VDD

VH

INA

INB

OE

0.1µF

+10V

Supertex

TC8220

DAMP

VL

GND

INC

IND

VSS

+PULSE

-PULSE

ENAB

V

PP

+100V

10nF

Supertex

MD1822

0.47µF

OUTA

OUTD

OUTC

1.0µF

1.0µF

V

NN

-100V