BFP520F_13 datasheet(1/6 Pages) INFINEON

Part #	BFP520F

Description	Low Noise Silicon Bipolar RF Transistor

PDF	6 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2013-09-19

1

BFP520F

1

2

4

3

Low Noise Silicon Bipolar RF Transistor

• For highest gain and low noise amplifier

Outstanding Gms = 22.5 dB at 1.8 GHz

Minimum noise figure NFmin = 0.95 dB at 1.8 GHz

• For oscillators up to 15 GHz

• Transition frequency fT = 45 GHz

• Pb-free (RoHS compliant) and halogen-free thin small

flat package with visible leads

• Qualification report according to AEC-Q101 available

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP520F

APs

1=B

2=E

3=C

4=E

-

TSFP-4

Maximum Ratings

at TA = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Collector-emitter voltage

TA = 25 °C

TA = -55 °C

VCEO

2.5

2.4

V

Collector-emitter voltage

VCES

10

Collector-base voltage

VCBO

10

Emitter-base voltage

VEBO

1

Collector current

IC

50

mA

Base current

IB

5

Total power dissipation1)

TS ≤ 98 °C

Ptot

120

mW

Junction temperature

TJ

150

°C

Storage temperature

TStg

-55 ... 150

1TS is measured on the emitter lead at the soldering point to pcb

Thermal Resistance

Parameter

Symbol

Value

Unit

Junction - soldering point1)

RthJS

430

K/W

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