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BFP410 Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BFP410 Datasheet(HTML) 2 Page - Infineon Technologies AG |
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2 / 8 page ![]() 2013-08-16 2 BFP410 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS 335 K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 4.5 5 - V Collector-emitter cutoff current VCE = 2 V, VBE = 0 VCE = 5 V, VBE = 0 , TA = 85 °C (verified by random sampling) ICES - - 1 2 30 50 nA Collector-base cutoff current VCB = 2 V, IE = 0 ICBO - 1 30 Emitter-base cutoff current VEB = 0.5 V, IC = 0 IEBO - 0.001 0.6 µA DC current gain IC = 13 mA, VCE = 2 V, pulse measured hFE 60 95 130 - 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) |
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