2014-04-04

1

BFP196W

1

2

3

4

Low Noise Silicon Bipolar RF Transistor

• For low noise, low distortion broadband

amplifiers in antenna and telecommunications

systems up to 1.5 GHz at collector currents from

20 mA to 80 mA

• Power amplifier for DECT and PCN systems

• Pb-free (RoHS compliant) and halogen-free package

with visible leads

• Qualification report according to AEC-Q101 available

ESD

(Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP196W

RIs

1 = E 2 = C 3 = E 4 = B -

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

12

V

Collector-emitter voltage

20

Collector-base voltage

20

Emitter-base voltage

2

Collector current

150

mA

Base current

15

700

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

115

K/W