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STB0FS12A Datasheet(PDF) 3 Page - Seoul Semiconductor |
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STB0FS12A Datasheet(HTML) 3 Page - Seoul Semiconductor |
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3 / 20 page ![]() www.seoulsemicon.com Product Data Sheet STB0FS12A - Mid-Power LED “제품 명 – 제품 군” 을 기입하십시오. 제품 군은 홈페이지 응용분야 분류기준을 참고한다. (예) SZ5M0WWC9 – High-power LED 3 Font 글씨체 표(Table) - 제목: Arial 10pt, 표 내부: Arial 8pt, 본문(Body) – Arial 9pt Revision numbering 기준: • 가스펙은 0.0 부터 시작 0.x…. • Final 승인원: 1.0 부터 시작 • 기존에서 일부 수정: +0.1 • 새로운 Data 추가 /또는 기존 것 삭제: +1.0 수정일자 표기형식; YYYY-MM-DD (예) 2013-04-01 Rev1.3, Dec 21, 2015 Performance Characteristics 전기적 특성 및 광 특성 스펙 테이블 (1) Seoul Semiconductor maintains a tolerance of 7% on Intensity and power measurements. (2) 2Θ 1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity. (3) Thermal resistance is junction to T S point (Refer to page 12). • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. • All measurements were made under the standardized environment of Seoul Semiconductor Table 2. Characteristics, I F=150mA, Tj= 25ºC, RH30% Table 3. Absolute Maximum Ratings Notes : Parameter Symbol Value Unit Min. Typ. Max. Forward Current I F - 150 - mA Forward Voltage V F - 3.2 - V Radiant Power - - 278 - mW Dominant Wavelength λ dom 450 - 460 nm Viewing Angle [1] 2 Θ 1/2 - 140 - Deg. Thermal resistance (J to S) [2] Rθ J-S - 17 - ℃/W ESD Sensitivity(HBM) - Class 3A JESD22-A114-E Parameter Symbol Value Unit Forward Current I F 300 mA Power Dissipation P D 1.1 W Junction Temperature T j 125 ºC Operating Temperature T opr -40 ~ + 85 ºC Storage Temperature T stg -40 ~ + 100 ºC |
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