010NE2LS datasheet(1/10 Pages) INFINEON

Part #	010NE2LS

Description	OptiMOSTM Power-MOSFET

PDF	10 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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1 / 10 page

BSC010NE2LS

OptiMOSTM Power-MOSFET

Features

• Optimized for high performance Buck converter

• Very low on-resistance R

DS(on) @ V GS=4.5 V

• 100% avalanche tested

• Superior thermal resistance

• N-channel

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

V GS=10 V, T C=25 °C

100

A

V GS=10 V, T C=100 °C

100

V GS=4.5 V, T C=25 °C

100

V GS=4.5 V,

T C=100 °C

100

V GS=10 V, T A=25 °C,

R thJA=50 K/W

2)

39

Pulsed drain current

3)

I D,pulse

T C=25 °C

400

Avalanche current, single pulse

4)

I AS

T C=25 °C

50

Avalanche energy, single pulse

E AS

I D=50 A, R GS=25 W

190

mJ

Gate source voltage

V GS

±20

V

Value

1) J-STD20 and JESD22

PG-TDSON-8

Type

Package

Marking

BSC010NE2LS

PG-TDSON-8

010NE2LS

V

DS

25

V

R

DS(on),max

1.0

m

W

I

D

100

A

Q

OSS

33

nC

Q

G(0V..10V)

64

nC

Product Summary

Rev. 2.2

page 1

2013-02-12

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