MCP19035-AAAAESLASHMF datasheet(5/44 Pages) MICROCHIP

5 / 44 page

 2012-2013 Microchip Technology Inc.

DS22326B-page 5

MCP19035

LDRV Fall Time

tFL

—10

CLOAD = 1.0 nF, Note 1

Dead Time

tDT

—

Two Dead-Time options, see

Section 5.2.2, Dead Time

Selection, Note 1

—12—

Short Circuit Protection

High-Side Over Current

Threshold Voltage

OCTH-HI

430

480

530

Note 1

, VCBOOT = 5V

Low-Side Over Current

Threshold Voltage

OCTH-LO

130

180

230

Note 1, Note 3

Minimum Pulse Width

During Short Circuit

tSS-MIN

—

800

—

Note 1

Off-Time Between

Restart Attempts (Hick-

Up Time)

tSS-HT

—

Note 1

Thermal Shutdown

TSHD

—

150

—

°C

Note 1

Thermal Shutdown

Hysteresis

TSHD_HYS

—

°C

Note 1

TEMPERATURE SPECIFICATIONS

Electrical Characteristics:

Unless otherwise indicated, VIN = 6.0V to 30V, FSW = 300 kHz

Parameters

Sym

Min

Typ

Max

Units

Conditions

Temperature Ranges

Specified Temperature Range

-40

—

+125

°C

Maximum Junction Temperature

TJ-MAX

——

+150

°C

Operating Temperature Range

-40

—

+125

°C

Storage Temperature Range

-65

—

+150

°C

Thermal Package Resistances

Thermal Resistance, 10L-3x3 DFN

JA

—

53.3

—

°C/W Typical 4-Layer board with

interconnecting vias

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Electrical Specifications

: Unless otherwise noted, VIN = 12V, FSW = 300 kHz, CIN = 1.0 µF, TA = +25°C (for typical

values), TA = -40°C to +125°C (for minimum and maximum).

Parameters

Symbol

Min

Typ

Max

Units

Conditions

Note 1:

Ensured by design. Not production tested.

Limited by the maximum power dissipation of the case.

Possibility to be adjusted for high volumes.

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