Electronic Components Datasheet Search
  New Zealand  ▼
ALLDATASHEET.CO.NZ

X  

Preview PDF HTML

IPN50R2K0CE Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # IPN50R2K0CE
Description  500V CoolMOS짧 CE Power Transistor
PDF  13 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPN50R2K0CE Datasheet(HTML) 4 Page - Infineon Technologies AG

  IPN50R2K0CE Datasheet HTML 1Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 2Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 3Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 4Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 5Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 6Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 7Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 8Page - Infineon Technologies AG IPN50R2K0CE Datasheet HTML 9Page - Infineon Technologies AG Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 13 page
background image
4
500VCoolMOSªCEPowerTransistor
IPN50R2K0CE
Rev.2.1,2016-06-13
Final Data Sheet
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
500
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
2.50
3
3.50
V
VDS=VGS,ID=0.05mA
Zero gate voltage drain current
IDSS
-
-
-
10
1
-
µA
VDS=500V,VGS=0V,Tj=25°C
VDS=500V,VGS=0V,Tj=150°C
Gate-source leakage curent
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
1.80
4.68
2.00
-
Ω
VGS=13V,ID=0.6A,Tj=25°C
VGS=13V,ID=0.6A,Tj=150°C
Gate resistance
RG
-
7
-
Ω
f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
124
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
9
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance, energy
related
1)
Co(er)
-
8
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related
2)
Co(tr)
-
26
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
6
-
ns
VDD=400V,VGS=13V,ID=0.8A,
RG=5.3
Ω
Rise time
tr
-
5
-
ns
VDD=400V,VGS=13V,ID=0.8A,
RG=5.3
Ω
Turn-off delay time
td(off)
-
21
-
ns
VDD=400V,VGS=13V,ID=0.8A,
RG=5.3
Ω
Fall time
tf
-
38
-
ns
VDD=400V,VGS=13V,ID=0.8A,
RG=5.3
Ω
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
0.7
-
nC
VDD=400V,ID=0.8A,VGS=0to10V
Gate to drain charge
Qgd
-
3.5
-
nC
VDD=400V,ID=0.8A,VGS=0to10V
Gate charge total
Qg
-
6
-
nC
VDD=400V,ID=0.8A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=400V,ID=0.8A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com