Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

VCC

7.5V

CBOOT

42V

CBOOT to SW

8V

SW to PGND

36V

Junction Temperature

+150˚C

Power Dissipation

(Note 2)

720mW

Storage Temperature

−65˚ to 150˚C

ESD Susceptibility

Human Body Model (Note 3)

1kV

Soldering Time, Temperature

10sec., 300˚C

Operating Ratings (Note 1)

VCC

4V to 7V

Junction Temperature Range

−40˚ to 125˚C

Electrical Characteristics

VCC = CBOOT = 5V, SW = GND = 0V, unless otherwise specified. Typicals and limits appearing in plain type apply for T

T

Symbol

Parameter

Condition

Min

Typ

Max

Units

POWER SUPPLY

I

q_op

Operating Quiescent

Current

PWM_IN = 0V

190

300

µA

TOP DRIVER

Peak Pull-Up Current

Test Circuit 1, V

= 0.1

Ω

3.0

A

Pull-Up Rds_on

I

1.0

Ω

Peak Pull-down Current

Test Circuit 2, V

= 0.1

Ω

−3.2

A

Pull-down Rds_on

I

0.5

Ω

t

4

Rise Time

Timing Diagram, C

3.3nF

17

ns

t

6

Fall Time

12

ns

t

3

Pull-Up Dead Time

Timing Diagram

23

ns

t

5

Pull-Down Delay

Timing Diagram, from

PWM_IN Falling Edge

27

ns

BOTTOM DRIVER

Peak Pull-Up Current

Test Circuit 3, V

= 0.1

Ω

3.2

A

Pull-up Rds_on

I

1.0

Ω

Peak Pull-down Current

Test Circuit 4, V

= 0.1

Ω

3.2

A

Pull-down Rds_on

I

0.5

Ω

t

8

Rise Time

Timing Diagram, C

3.3nF

17

ns

t

2

Fall Time

14

ns

t

7

Pull-up Dead Time

Timing Diagram

28

ns

t

1

Pull-down Delay

Timing Diagram, from

PWM_IN Rising Edge

13

ns

LOGIC

V

uvlo_up

Power On Threshold

VCC rises from 0V toward

5V

4

3.7

V

V

uvlo_dn

Under-Voltage-Lock-Out

Threshold

3.0

2.5

V

V

uvlo_hys

Under-Voltage-Lock-Out

Hysteresis

0.7

V

V

IH_EN

SYNC_EN Pin High Input

2.4

V

V

IL_EN

SYNC_EN Pin Low Input

0.8

V

www.national.com

4