STL7N6F7 datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Electrical characteristics

STL7N6F7

4/11

DocID028257 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS= 0 V

IDSS

Zero gate voltage drain current

VGS = 0 V , VDS = 60 V

µA

IGSS

Gate-body leakage current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 μA

RDS(on)

Static drain-source on-resistance

VGS = 10 V, ID = 3.5A

0.021

0.025

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

450

Coss

Output capacitance

210

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 48 V, ID= 7 A

VGS = 10 V

(see Figure 3: "Test circuit for gate

charge behavior"

)

Qgs

Gate-source charge

TBD

Qgd

Gate-drain charge

TBD

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VDD = 30 V, ID = 3.5A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 2: "Test circuit for resistive

load switching times"

)

TBD

Rise time

TBD

td(off)

Turn-off delay

time

TBD

Fall time

TBD

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