STL33N65M2 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STL33N65M2

4/15

DocID026089 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage

drain current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V,

VDS = 650 V, TC=125 °C (1)

100

µA

IGSS

Gate-body leakage

current

VDS = 0 V, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 10 A

0.124

0.154

Ω

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

1790

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

380

Total gate charge

VDD = 520 V, ID = 24 A

VGS = 10 V

(see Figure 15: "Gate charge

test circuit")

41.5

Qgs

Gate-source charge

6.8

Qgd

Gate-drain charge

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 12 A

= 4.7 Ω, VGS = 10 V

(see Figure 14: "Switching times

test circuit for resistive load" and

Figure 19: "Switching time

waveform")

13.5

Voltage rise time

11.5

td(off)

Turn-off delay time

72.5

Current fall time

11.5

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