ESDA25P35-1U1M datasheet(3/10 Pages) STMICROELECTRONICS

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ESDA25P35-1U1M

Characteristics

DocID029556 Rev 1

3/10

1.2

Characteristics (curves)

Figure 3: Peak power dissipation versus initial

temperature (typical value)

Figure 4: Peak pulse power versus exponential

pulse duration (Tj initial = 25°C) (typical value)

Figure 5: Clamping voltage versus peak pulse

current (max. value)

Figure 6: Leakage current versus junction

temperature (typical value)

Figure 7: ESD response to IEC 61000-4-2 (+8kV

contact discharge)

Figure 8: ESD response to IEC 61000-4-2 (-8kV

contact discharge)

500

750

1000

1250

1500

100

125

150

175

PPP (W)

Tj(°C)

8/20µs

typical value

100

1000

100

1000

PPP (W)

tp(µs)

Tj initial = 25 °C

typical value

0.10

1.00

10.00

100.00

20.00

25.00

30.00

35.00

40.00

45.00

IPP (A)

VCL(V)

8/20 µs

Tj initial = 25 °C

100

125

150

IR(nA)

VR = VRM = 22 V

reverse

typical value

Tj(°C)

10 V/div

20 ns/div

ESD level

C L@ 3 0 n s

CL@ 6 0 n s

C L@ 1 0 0 n s

+8kV

45V

26V

27V

5 V/div

20 ns/div

ESD level

CL@ 30n s

CL@ 60 n s

CL@ 100 n s

-8kV

-16.2V

-1.8V

-1.2V

-0.8V

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