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2SD130 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD130 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD130 DESCRIPTION · DC Current Gain -hFE = 15(Min)@ IC= 3A · Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 5.0 A IB Base Current 1.0 A PC Collector Power Dissipation@TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
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