| Electronic Components Datasheet Search |
|
2SD1301 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1301 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1301 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 5.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.4A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.4A 1.5 V ICBO Collector Cutoff Current VCB= 750V; IE= 0 50 μ A VCB= 1500V; IE= 0 1 mA hFE DC Current Gain IC= 1A; VCE= 10V 3 12 VECF C-E Diode Forward Voltage IF= 4A 2.5 V ts Storage Time IC= 1A, IBend= 0.4A 6.0 μ s tf Fall Time 0.8 μ s |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |