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2SB625 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB625
Description  Silicon PNP Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB625 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB625
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min)
·
Low Collector Saturation Voltage-
: VCE(sat)= -1.0V(Max.) @IC= -5A
·
Wide area of safe operation
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
PC
Collector Power Dissipation
@Tc=25℃
60
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150
℃


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