VP2450

DS20005569A-page 2

 2016 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †

Gate-to-source Voltage ........................................................................................................................................... ±20V

Operating and Storage Temperatures .................................................................................................. –55°C to +150°C

† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the

device. This is a stress rating only, and functional operation of the device at those or any other conditions above those

indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for

extended periods may affect device reliability.

ELECTRICAL CHARACTERISTICS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

DC PARAMETER (Note 1 unless otherwise stated)

Drain-to-source Breakdown Voltage

–500

—

—

V

Gate Threshold Voltage

–1.5

—

–3.5

V

—

—

–4.8

Gate Body Leakage Current

—

—

–100

nA

Zero Gate Voltage Drain Current

—

—

–10

µA

—

—

–1

mA

On-state Drain Current

–75

—

—

mA

–200

—

—

Static Drain-to-source On-state

Resistance

—

—

35

Ω

—

—

30

—

—

0.75

%/°C

(Note 2)

AC PARAMETER (Note 2)

Forward Transconductance

150

320

—

Input Capacitance

—

—

190

pF

Common Source Output Capacitance

—

—

75

Reverse Transfer Capacitance

—

—

20

Turn-on Delay Time

—

—

10

ns

Rise Time

—

—

25

Turn-off Delay Time

—

—

45

Fall Time

—

—

25

DIODE PARAMETER

Diode Forward Voltage Drop

—

—

–1.8

V

(Note 1)

Reverse Recovery Time

—

300

—

ns

(Note 2)

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

2: Specification is obtained by characterization and is not 100% tested.