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ASMT-MYA0 Datasheet(PDF) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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ASMT-MYA0 Datasheet(HTML) 2 Page - AVAGO TECHNOLOGIES LIMITED |
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2 / 6 page ![]() Device Selection Guide at Junction Temperature Tj = 25�� ��� �olor Part Number Luminous Flux, Φv[1,2,3] (lm) Test �urrent (mA) Dice Technology Min Typ Max Warm White ASMT-MYA0 43.0 50.0 73.0 350 InGaN Notes: 1. ΦV is the total luminous flux output as measured with an integrating sphere at 25ms mono pulse condition. 2. Flux tolerance is ±10 % 3. ΦV data are only applicable for ASMT-MY00 component level device only. Part Numbering System ASMT-M x A0 - N x1 x2 x3 0 Color Bin Selection Max Flux Bin Selection Min Flux Bin Selection Color Y - Warm White Absolute Maximum Ratings[3] at TA = 25�� Parameter ASMT-MYA0 Units DC Forward Current [1] 350 mA Peak Pulsing Current [] 500 mA Power Dissipation 1400 mW LED Junction Temperature 110 °C Operating Ambient Temperature Range -40 to +85 °C Storage Temperature Range -40 to +100 °C Note: 1. DC forward current – derate linearly based on Figure 5. 2. Pulse condition duty factor = 10%, Frequency = 1kHz. 3. Absolute Maximum Rating data are only applicable for ASMT-MY00 component level device only. Optical �haracteristics[2] (TA = 25 ��) Part Number �olor �orrelated �olor Temperature, ��T (Kelvin) Viewing Angle 2��� ��� �� [1] (Degrees) Luminous Efficiency (lm/W) Min Max Typ Typ ASMT-MYA0 Warm White 600 4000 110 40 Notes: 1. θ½ is the off-axis angle where the luminous intensity is ½ the peak intensity. 2. Optical Characteristics data are only applicable for ASMT-MY00 component level device only. Electrical �haracteristic[3] (TA = 25��) Dice Type Forward Voltage VF (Volts) @ IF = 350mA Reverse Voltage VR [1] Thermal Resistance R�j-b (��/W) [2] Typ Max. Typ. InGaN 3.6 4.0 Not recommended 18 Note: 1. Not designed for reverse bias operation. 2. Rθj-b is Thermal Resistance from LED junction to MCPCB. 3. Electrical Characteristic data are only applicable for ASMT-MY00 component level device only. |
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