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2SC5065 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC5065 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website：www.iscsemi.cn isc & iscsemi isregistered trademark 1 isc Silicon NPN RF Transistor 2SC5065 DESCRIPTION · Low Noise and High Gain NF = 1.1 dB TYP., ︱S21e︱2= 12 dB TYP. @VCE = 5 V, f = 1.0 GHz · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for VHF~UHF band low noise amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 15 mA PC Collector Power Dissipation @TC=25℃ 0.1 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ |
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