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40N20 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 40N20
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

40N20 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  40N20 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 40N20 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
2
isc N-Channel MOSFET Transistor
40N20
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 20A
50
mΩ
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±
100
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS=0
1.0
uA
VSD
Forward On-Voltage
IS= 40A; VGS=0
1.2
V
Gfs
Forward Transconductance
VDS≥ 25V；ID= 25A
26
S
Ciss*
Input capacitance
VGS=0V
VDS=25V
f=1MHz
6500
pF
Coss*
Output capacitance
290
pF
Crss*
Reverse transfer capacitance
220
pF
td(on)*
Turn-on delay time
VDD=30V
VGS=10V
ID=2A
RG=2.5Ω
RL=15Ω
26
ns
Tr*
Rise time
24
ns
td(off)*
Turn-off delay time
91
ns
Tf*
Fall time
39
ns
Qg*
Total Gate Charge
ID=30A
VDS=30V
VGS=10V
163
nC
Qgs*
Gate-Source Charge
31
nC
Qgd*
Gate-Drain Charge
64
nC
*:Pulse width≤300us,duty cycle ≤2%
*:Guaranteed by design,not subject to production



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