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2SD460 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD460
Description  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD460 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD460
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
·
High DC Current Gain
: hFE= 1500(Min) @IC= 5A
·
Low Saturation Voltage
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICP
Collector Current-Peak
12
A
IB
Base Current-Continuous
0.3
A
PC
Collector Power Dissipation
@ Ta=25℃
2
W
Collector Power Dissipation
@ TC=25℃
50
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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