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2SD504 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SD504
Description  isc Silicon NPN Darlingtion Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD504 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlingtion Power Transistor
2SD504
DESCRIPTION
·
High DC current gain-
hFE = 750 (Min) @ IC = 6A
·
Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
12
A
ICM
Collector Current-Peak
20
A
IB
Base Current
0.2
A
PC
Collector Power Dissipation@TC=25℃
150
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃


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