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2SD506 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD506 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Darlingtion Power Transistor 2SD506 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ; IB= 0 100 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 6A; IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A; IB= 120mA 3.0 V VBE(on) Base-Emitter On voltage IC= 6A ; VCE= 3V 2.8 V ICEO Collector Cutoff current VCE= 50V; IB= 0 1.0 mA ICBO Collector Cutoff current VCB= 100V;IE= 0 VCB= 100V;IE= 0;TC= 150℃ 0.5 5.0 mA IEBO Emitter Cut-off current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 6A ; VCE= 3V 750 18000 hFE-2 DC Current Gain IC= 12A ; VCE= 3V 100 COB Output Capacitance IE=0 ; VCB= 10V;ftest= 0.1MHz 300 pF |
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