2N6193 datasheet(1/4 Pages) MA-COM

Part #	2N6193

Description	PNP Power Silicon Transistor

PDF	4 Pages

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Manufacturer	MA-COM [M/A-COM Technology Solutions, Inc.]

Direct Link	http://www.macomtech.com

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1 / 4 page

PNP Power Silicon Transistor

Rev. V1

2N6193

1

MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

DC-0013425

1

Features

 JAN, JANTX, JANTXV, JANS, and JANSR 100K

rads (si) per MIL-PRF-19500/561

 TO-39 (TO-205AD) Package

Electrical Characteristics

Parameter

Test Conditions

Symbol Units

Min.

Max.

Off Characteristics

Collector - Emitter Breakdown Voltage

IC = 50 mAdc

V(BR)CEO Vdc

100

—

Collector - Emitter Cutoff Current

VCE = 100 Vdc

VCE = 90 Vdc, VBE = 1.5 Vdc

ICEO

ICEX

µAdc

—

100

10

Collector - Base Cutoff Current

VCB = 100 Vdc

ICBO

µAdc

—

10

Emitter - Base Cutoff Current

VEB = 6.0 Vdc

IEBO

µAdc

—

100

On Characteristics1

Forward Current Transfer Ratio

IC = 0.5 Adc, VCE = 2.0 Vdc

IC = 2.0 Adc, VCE = 2.0 Vdc

IC = 5.0 Adc, VCE = 2.0 Vdc

HFE

-

60

40

—

240

—

Collector - Emitter Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

VCE(SAT) Vdc

—

0.7

1.2

Emitter - Base Saturation Voltage

IC = 2.0 Adc, IB = 0.2 Adc

IC = 5.0 Adc, IB = 0.5 Adc

VBE(SAT) Vdc

—

1.2

1.8

Dynamic Characteristics

Magnitude of Common Emitter Small-Signal

Short-Circuit Forward Current Transfer Ratio

IC = 0.5 Adc, VCE = 10.0 Vdc, f = 10 mHz | HFE |

-

3

15

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1 MHz COBO

pF

—

300

Input Capacitance

VBE = 2 Vdc, IC = 0, 100 kHz ≤ f ≤ 1 MHz

CIBO

pF

—

1250

Switching Characteristics

Delay Time

VCC = -40 Vdc; VBE(OFF) = 2.3 Vdc

TD

ns

—

100

Rise Time

IC = 2.0 Adc, IB1 = 0.2 Adc

TR

ns

—

100

Storage Time

VCC = -40 Vdc; IC = 2.0 Adc

TS

µs

—

2.0

Fall Time

IB1 = -IB2 = 0.2 Adc

TF

ns

—

200

Safe Operating Area

DC Tests:

TC = +25°C, I Cycle, t ≥ 0.5 s

Test 1:

VCE = 2 Vdc, IC = 5 Adc

Test 2:

VCE = 90 Vdc, IC = 55 mAdc

1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.

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