SS8550 datasheet(1/2 Pages) YEASHIN

Part #	SS8550

Description	Plastic-Encapsulate Transistors

PDF	2 Pages

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Manufacturer	YEASHIN [Yea Shin Technology Co., Ltd]

Direct Link	http://www.yeashin.com

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DATA SHEET

SEMICONDUCTOR

http://www.yeashin.com

1

REV.02 20120705

SS8550

TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 1 W

(TA=25

℃)

: 2 W

(TC=25

℃)

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-40

V

VCEO

Collector-Emitter Voltage

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1500

mA

TJ, Tstg

Junction and Storage Temperature

-55-150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be

impaired.

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃

unless

otherwise

specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic=-100uA, IE=0

-40

V

Collector-emitter breakdown voltage

V(BR)CEO

Ic=-0.1mA, IB=0

-25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-40V, IE=0

-0.1

µA

Emitter cut-off current

ICEO

VCE=-20V, IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

uA

hFE(1)

VCE=-1V, IC=-100mA

85

400

DC current gain

hFE(2)

VCE=-1V, IC=-800mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=-800mA, IB=-80mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-800mA, IB=-80mA

-1.2

V

Base-emitter voltage

VBE(on)

VCE=-1V, IC=-10mA

-1

V

Out capacitance

CO

VCB=-10V, IE=0mA,f=1MHZ

20

pF

Transition frequency

fT

VCE=-10V, IC=-50mA,f=-30MHZ

100

MHz

CLASSIFICATION OF hFE(2)

Rank

B

C

D

E

Range

85-160

120-200

160-300

300-400

1 2 3

TO-92

1. EMITTER

2. BASE

3. COLLECTOR

TO-92

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