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IRGS30B60K Datasheet(PDF) 1 Page - International Rectifier |
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IRGS30B60K Datasheet(HTML) 1 Page - International Rectifier |
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1 / 13 page  INSULATED GATE BIPOLAR TRANSISTOR 10/8/03 www.irf.com 1 IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C tsc > 10µs, TJ=150°C VCE(on) typ. = 1.95V Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. PD - 94799 D2Pak IRGS30B60K TO-220AB IRGB30B60K TO-262 IRGSL30B60K E C G n-channel Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 78 g IC @ TC = 100°C Continuous Collector Current 50 A ICM Pulse Collector Current (Ref.Fig.C.T.5) 120 ILM Clamped Inductive Load current 120 VISOL RMS Isolation Voltage, Terminal to Case, t=1 min. 2500 V VGE Gate-to-Emitter Voltage ±20 PD @ TC = 25°C Maximum Power Dissipation 370 W PD @ TC = 100°C Maximum Power Dissipation 180 TJ Operating Junction and -55 to +175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units RθJC Junction-to-Case- IGBT ––– ––– 0.41 °C/W RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount d ––– ––– 62 RθJA Junction-to-Ambient (PCB Mount, Steady State) eÃÃ ––– ––– 40 Wt Weight ––– 1.44 ––– g |
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