TIC236 datasheet(2/3 Pages) BOURNS

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TIC236 SERIES

SILICON TRIACS

PRODU CT

INFORMA TION

DECEMBER 1971 - REVISED SEPTEMBER 2002

Specifications are subject to change without notice.

† All voltages are with respect to Main Terminal 1.

NOTE

5: The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:

RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.

Holding current

Vsupply = +12 V†

Vsupply = -12 V†

IG = 0

Init’ ITM = 100 mA

Init’ ITM = -100 mA

-12

-40

Latching current

Vsupply = +12 V†

Vsupply = -12 V†

(see Note 5)

-80

dv/dt

Critical rate of rise of

off-state voltage

VD = Rated VD

IG = 0

TC = 110°C

±400

V/µs

dv/dt(c)

Critical rise of

commutation voltage

VD = Rated VD

di/dt = 0.5 IT(RMS)/ms

TC = 80°C

IT = 1.4 IT(RMS)

±1.2

±9

V/µs

di/dt

Critical rate of rise of

on -state current

VD = Rated VD

diG/dt = 50 mA/µs

IGT = 50 mA

TC = 110°C

±100

A/µs

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

TYPICAL CHARACTERISTICS

Figure 1.

Figure 2.

GATE TRIGGER CURRENT

C - Case Temperature - °C

-60

-40

-20

100

120

0·1

100

1000

TC08AA

CASE TEMPERATURE

supply IGTM

AA = ± 12 V

L = 10 Ω

p(g) = 20 µs

GATE TRIGGER VOLTAGE

C - Case Temperature - °C

-60

-40

-20

100

120

0·1

TC08AB

CASE TEMPERATURE

AA = ± 12 V

L = 10 Ω

p(g) = 20 µs

supply IGTM

}

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