CY7C1069GN datasheet(9/15 Pages) CYPRESS

9 / 15 page

CY7C1069GN

Document Number: 002-00046 Rev. *A

Page 9 of 15

Figure 7. Write Cycle No. 1 (CE Controlled) [19, 20, 21, 22]

Figure 8. Write Cycle No. 2 (WE Controlled, OE LOW) [19, 20, 21, 22]

Switching Waveforms (continued)

tHD

tSD

tSCE

tSA

tHA

tAW

tPWE

tWC

DATA IO

ADDRESS

DATA IN VALID

tHD

tSD

tSCE

tHA

tAW

tPWE

tWC

tSA

tLZWE

tHZWE

DATA I/O

ADDRESS

DATA IN VALID

Notes

19. CE is a shorthand combination of both CE1 and CE2 combined. It is active LOW.

20. Data I/O is high impedance if OE = VIH.

21. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.

22. The internal write time of the memory is defined by the overlap of WE = VIL, CE = VIL. These signals must be LOW to initiate a write, and the HIGH transition of any

of these signals can terminate the operation. The input data setup and hold timing should be referenced to the edge of the signal that terminates the write.

CY7C1069GN Datasheet(PDF) 9 Page - Cypress Semiconductor

CY7C1069GN Datasheet(HTML) 9 Page - Cypress Semiconductor

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL